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| 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT3 1.6 0.3 (3) 0.7 0.55 0.8 (2) (1) 0.2 0.5 0.5 1.0 0.2 0.15 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK3019 Taping TL 3000 (1)Source (2)Gate (3)Drain Abbreviated symbol : KN Equivalent circuit Drain Gate Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP 1 Limits 30 20 100 400 150 150 -55 to +150 Unit V V mA mA mW C C Gate Protection Diode 0.1Min. Applications Interfacing, switching (30V, 100mA) 1.6 Source A protection diode is included between the gate PD2 Tch Tstg and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. 1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands. Thermal resistance Parameter Channel to ambient With each pin mounted on the recommended lands. Symbol Rth(ch-a) Limits 833 Unit C / W Rev.C 1/3 2SK3019 Transistor Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V ms pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V ID=10mA, VDS=3V VDS=5V VGS=0V f=1MHz ID=10mA, VDD VGS=5V RL=500 RG=10 5V Electrical characteristic curves GATE THRESHOLD VOLTAGE : VGS(th) (V) 0.15 4V DRAIN CURRENT : ID (A) 200m 3V DRAIN CURRENT : ID (A) 3.5V Ta=25C Pulsed 100m 50m 20m 10m 5m 2m 1m 0.5m VDS=3V Pulsed 2 VDS=3V ID=0.1mA Pulsed 1.5 0.1 2.5V 1 0.05 2V VGS=1.5V Ta=125C 75C 25C -25C 0.5 0.2m 0 0 1 2 3 4 5 0.1m 0 1 2 3 4 0 -50 -25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 Ta=125C 75C 25C -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 20 10 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=4V Pulsed 50 Ta=125C 75C 25C -25C VGS=2.5V Pulsed 15 Ta=25C Pulsed 10 2 1 0.5 0.001 0.002 2 1 0.5 0.001 0.002 5 ID=0.1A ID=0.05A 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static drain-source on-state resistance vs. drain current () Fig.5 Static drain-source on-state resistance vs. drain current () Fig.6 Static drain-source on-state resistance vs. gate-source voltage Rev.C 2/3 2SK3019 Transistor 9 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () REVERSE DRAIN CURRENT : IDR (A) 8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 ID=100mA VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 0.5 VDS=3V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m 0.2 0.1 0.05 0.02 0.01 0.005 0.002 Ta=-25C 25C 75C 125C VGS=0V Pulsed ID=50mA Ta=125C 75C 25C -25C 100 125 150 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.9 Reverse drain current vs. source-drain voltage () REVERSE DRAIN CURRENT : IDR (A) 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V Ta=25C Pulsed 50 20 CAPACITANCE : C (pF) Ta=25C f=1MHZ VGS=0V 1000 500 SWITHING TIME : t (ns) tf td(off) Ciss 10 5 200 100 50 20 10 5 2 0.1 0.2 Ta=25C VDD=5V VGS=5V RG=10 Pulsed 0V Coss Crss tr td(on) 2 1 0.5 0.1 0 0.5 1 1.5 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.10 Reverse drain current vs. source-drain voltage () Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td (off) tf toff VDD td (on) ton tr Fig.13 Switching time measurement circuit Fig.14 Switching time waveforms Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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